Presentation Information
[21a-A202-4]Effects of doping and influences of etching by Cl2plasma treatment for PVD-WS2films
〇(M1)Keita Kuohara1, Shinya Imai1, Shigetaka Tomiya1, Tetsuya Tatsumi1, Hitoshi Wakabayashi1 (1.Tokyo Tech)
Keywords:
Transition Metal Dichalcogenide,plasma treatment,sputtering
WS2 films, a type of TMDC, are expected to be applied to thermoelectric devices, but controlling carrier density has been a challenge. In this study, we attempted to increase the carrier density of WS2 films by Cl2 plasma treatment. It was confirmed that the sheet resistance was reduced by the plasma treatment, but the film thickness was also decreased. The calculated conductivity was increased by plasma treatment. Although doping and etching occurred simultaneously in this treatment, it is thought that the carrier density increased.