[21a-A202-1~11] 17.3 Layered materials

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[21a-A202-6] Robust and low-voltage ReRAM operations in 1T-VSe₂ with an Ag electrode

〇(M1)Yuta Nakamura¹, Mitsuru Inada¹, Ueno Keiji², Mahito Yamamoto¹ (1.Kansai Univ., 2.Saitama Univ)

Keywords:

ReRAM,VSe2,Silver

In this sutdy, we fabricate a ReRAM device using 1T-VSe₂ as a resistive change layer and Ag as an electrode.We observed a low and roubst set voltage of 0.1±0.01 V.