[21a-A302-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[21a-A302-2] High-speed imaging of microwave plasma ignition process in plasma CVD systems

〇(M1)Yoichi Ito¹, Miharu Niimoto¹, Haruhiko Himura¹, Akio Sanpei¹, Yuichi Kawachi¹ (1.Kyoto Inst. of Tech.)

Keywords:

plasma,semiconductor deposition,surface wave

High-speed imaging of the ignition process of surface wave plasma revealed that the emission distribution near the dielectric window rotates in the azimuthal direction. This phenomenon was observed to be more pronounced when the plasma was generated with argon gas. The same phenomenon was observed in the case of the gas used for plasma CVD for semiconductor deposition. The emission patterns were compared by changing the gas pressure and microwave power. The relationship between the azimuthal rotation of the luminance distribution and plasma generation by surface waves is reported.