Session Details
[21a-A302-1~12]8.2 Plasma deposition of thin film, plasma etching and surface treatment
Thu. Sep 21, 2023 9:00 AM - 12:00 PM JST
Thu. Sep 21, 2023 12:00 AM - 3:00 AM UTC
Thu. Sep 21, 2023 12:00 AM - 3:00 AM UTC
A302 (KJ Hall)
Daisuke Ogawa(Chubu Univ.)
[21a-A302-1]Three-dimensional reconstruction in surface wave plasma and evaluation of its accuracy
〇Miharu Niimoto1, Akio Sanpei1, Haruhiko Hmura1, Yoichi Ito1, Shinichiro Inagaki1 (1.KIT Univ.)
[21a-A302-2]High-speed imaging of microwave plasma ignition process in plasma CVD systems
〇(M1)Yoichi Ito1, Miharu Niimoto1, Haruhiko Himura1, Akio Sanpei1, Yuichi Kawachi1 (1.Kyoto Inst. of Tech.)
[21a-A302-3]Experimental search for an operation that maximizes the amount of negative ions using laser photodetachment
〇(M1)Ryoya Horie1, Takuto Tomotsu1, Subaru Nishio1, Tensei Tanba1, Haruhiko Himura1, Akio Sanpei1, Yuichi Kwachi1, Takashi Kanki2 (1.Kyoto Inst. Tech., 2.Japan Coast Guard Acad.)
[21a-A302-4]Development of reactive negative ion beam extraction system and flux measurement
〇Tensei Tanba1, Takuto Tomotsu1, Subaru Nishio1, Ryoya Horie1, Haruhiko Himura1, Akio Sanpei1, Yuichi Kawachi1, Takashi Kanki2 (1.KIT, 2.Jpn. Coast Guard Acad.)
[21a-A302-5]Two-dimensional PIC-MCC Simulation of Capacitively Coupled Ar Plasma driven at 3 MHz
〇Kazuki Denpoh1 (1.Tokyo Electron Technology Solutions Ltd)
[21a-A302-6]Control of Metal Impurity Doping during Boron Nitride Deposition Using RePAC System
〇Yuya Asamoto1,5, Masao Noma2, Shigehiko Hasegawa3, Michiru Yamashita4, Keiichiro Urabe1, Koji Eriguchi1 (1.Kyoto Univ., 2.Shinko Seiki, 3.Osaka Univ., 4.Hyogo Pref. Inst. Technol., 5.JSPS Research Fellow)
[21a-A302-7]First-Principles Prediction of Hexagonal Boron Nitride Properties with Metal Impurities
〇Tatsuya Hattori1, Yuya Asamoto1, Masao Noma2, Shigehiko Hasegawa3, Michiru Yamashita4, Keiichiro Urabe1, Koji Eriguchi1 (1.Kyoto Univ., 2.SHINKO SEIKI. Co., LTD., 3.Osaka Univ., 4.Hyogo Pref. Inst. Technol.)
[21a-A302-8]Effect of ion bombardment in the growth of carbon hard mask on its plasma etch resistance
〇Yusuke Ando1, Hiroki Kondo2, Takayoshi Tsutsumi2, Kenji Ishikawa2, Makoto Sekine2, Masaru Hori2 (1.Nagoya Univ., 2.Nagoya Univ. cLPS)
[21a-A302-9]Control of hydrogenated amorphous carbon film properties by tailored voltage waveform discharges
〇Michihiro Otaka1, Hiroshi Otomo1,2, Kizuki Ikeda1, Jiansyun Lai1, Daichi Wakita1, Kunihiro Kamataki1, Naoto Yamashita1, Naho Itagaki1, Kazunori Koga1, Masaharu Shiratani1, Takahiro Shindo2, Satoshi Tanaka2, Tatsuo Matsudo2 (1.Kyushu Univ., 2.Tokyo Electron Technology Solutions)
[21a-A302-10]Deposition of diamond-like carbon film using rare gas on high power pulsed magnetron sputtering
〇(M2)Keita Takeda1, Toru Harigai2, Akinori Oda3, Hiroyuki Kousaka4, Takayuki Ohta1 (1.Meijo Univ., 2.Toyohashi Univ. Technol., 3.Chiba Inst. Technol., 4.Gifu Univ.)
[21a-A302-11]Deposition of diamond-like carbon using unipolar-double-pulse high-power pulsed magnetron sputtering
〇(M2)Hiro Kunieda1, Toru Harigai2, Akinori Oda3, Hiroyuki Kousaka4, Takayuki Ohta1 (1.Meijo Univ., 2.Toyohashi Univ. Technol., 3.Chiba Inst. Technol., 4.Gifu Univ.)
[21a-A302-12]Oxidation Number Control of Ti-oxides and Photocurrent Properties of Perovskite Solar Cells
〇Chikara Hirai1, Takeru Okada1 (1.Tohoku Univ)