[21a-A302-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A302-4] Development of reactive negative ion beam extraction system and flux measurement

〇Tensei Tanba¹, Takuto Tomotsu¹, Subaru Nishio¹, Ryoya Horie¹, Haruhiko Himura¹, Akio Sanpei¹, Yuichi Kawachi¹, Takashi Kanki² (1.KIT, 2.Jpn. Coast Guard Acad.)

Keywords:

Plasma,Plasma process,Remote plasma

This study attempted to develop a device that selects only specific ions, draws them out as a beam, and irradiates them onto the wafer. It has been confirmed that the separator that selects only specific ions works properly in the simulation. The flux of the beam was measured with a Faraday cup. Comparison of the simulation results with the measurement results is reported.