[21a-A302-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A302-8] Effect of ion bombardment in the growth of carbon hard mask on its plasma etch resistance

〇Yusuke Ando¹, Hiroki Kondo², Takayoshi Tsutsumi², Kenji Ishikawa², Makoto Sekine², Masaru Hori² (1.Nagoya Univ., 2.Nagoya Univ. cLPS)

Keywords:

Plasma process,semiconductor,amorphous carbon

The elucidation of the growth mechanism of amorphous carbon is conducted with a combination of radical measurement and machine learning to improve its etch resistance. In this research, contribution analysis of the machine learning models made it clear that the ion irradiation generated with substrate bias contributes to determining etch resistance when the Hydrogen flow ratio is small. In addition, the effect of synergies between reactive species which determines the film property will be quantitatively discussed based on the ion and radical measurement with a quadrupole mass spectrometer.