[21a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[21a-A304-10] Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (8) -Recombination process (I)-

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:

single interface amphoteric defects,charge pumping,electron capture/emission elementary processes

In this talk, following seven previous reports, we directly observe the recombination elementary processes of conduction band electrons trapped in the amphoteric level of a single MOS interface defect with valence band holes, and derive recombination time constants for each of the acceptorlike and donorlike levels.