[21a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[21a-A304-11] Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (9) -Recombination process (II)-

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:

single interface amphoteric defects,charge pumping,electron capture/emission elementary processes

In this talk, we directly observe successive recombination elementary processes of conduction band electrons trapped in both acceptorlike and donorlike levels with valence band holes in a single MOS interface defect with amphoteric levels, and derive the respective recombination time constants.