[21a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[21a-A304-6] Valley splitting by extended zone effective mass approximation incorporating strain

〇Jinichiro Noborisaka¹, Toshiaki Hayashi¹, Akira Fujiwara¹, Katsuhiko Nishiguchi¹ (1.NTT BRL)

Keywords:

Valley splitting,Strain,Silicon

MOSFETs fabricated on SIMOX substrates annealed at high temperatures for a long time are known to exhibit large valley splitting, but the origin of this splitting has long been unknown. The extended zone effective mass approximation predicts that strain has a large effect on valley splitting, and we have analyzed valley splitting based on this theory. As a result, it became clear that the shear strain in the [110] direction of about 5% near the BOX interface is a promising source of the large valley splitting.