[21a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A304-8] Characteristics of pn junction diode at cryogenic temperature

〇(M1)Keito Yoshinaga¹, Tomohisa Miyao¹, Takahisa Tanaka², Ken Uchida¹ (1.The Univ. of Tokyo, 2.Keio Univ.)

Keywords:

cryogenic,pn junction,diode

The characteristics of pn junction diodes on substrates with higher doping concentration compared to past studies were investigated, aiming for low temperature operation of CMOS necessary to high integration of quantum computers. The evaluation was performed at cryogenic temperatures, and the current conduction mechanism of pn diode was examined. Through measurements using devices of various sizes and TCAD simulations, the regions where current flows at low temperatures were discussed. Then, the possibility was verified that the field dependence of the well resistance is related to the change in the slope of the current-voltage relationship.