[21a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[21a-A304-9] Temperature-Driven Changes of Random Telegraph Noise Sources in Bulk MOSFETs

〇Takumi Inaba¹, Hiroshi Oka¹, Hidehiro Asai¹, Hiroshi Fuketa¹, Shota Iizuka¹, Kimihiko Kato¹, Shunsuke Shitakata¹, Koichi Fukuda¹, Takahiro Mori¹ (1.AIST)

Keywords:

quantum computer,cryo-CMOS,random telegraph noise

Assignment and reduction of 1/f noises in cryogenic operations of MOSFETs are of great importance for the realization of cryo-CMOS as qubits controllers. Although interface states are likely to be relevant as reported in recent study, the microscopic picture of the states are still unveiled. In this study, the temperature dependence of 1/f^2 noises, by which 1/f noises are composed, are analyzed to reveal its microscopic origin.