[21a-A306-1~9] 17.2 Graphene

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[21a-A306-1] Fabrication and evaluation of graphene/WC/SiC heterostructure

〇(M2)Kohei Otsuka¹, Takahiro Ito², Akira Endo³, Wataru Norimatsu⁴ (1.Nagoya Univ., 2.NUSR, 3.Univ. of Tokyo, 4.Waseda Univ.)

Keywords:

graphene,tungsten carbide,TEM

Graphene can be grown by thermal decomposition of SiC and other carbides. In this study, we focus on tungsten carbide (WC), a kind of topological semimetal. Highly crystalline WC thin films were deposited on 4H-SiC substrates by pulsed laser deposition (PLD), and graphene was formed by thermal decomposition of the film. The crystal structure, electronic structure, and electrical conduction properties of the obtained graphene/WC/SiC samples were evaluated.