Session Details
[21a-A306-1~9]17.2 Graphene
Thu. Sep 21, 2023 9:00 AM - 11:30 AM JST
Thu. Sep 21, 2023 12:00 AM - 2:30 AM UTC
Thu. Sep 21, 2023 12:00 AM - 2:30 AM UTC
A306 (KJ Hall)
Masao Nagase(Tokushima Univ.)
[21a-A306-1]Fabrication and evaluation of graphene/WC/SiC heterostructure
〇(M2)Kohei Otsuka1, Takahiro Ito2, Akira Endo3, Wataru Norimatsu4 (1.Nagoya Univ., 2.NUSR, 3.Univ. of Tokyo, 4.Waseda Univ.)
[21a-A306-2]The interface structures of transferred graphene SiC(0001)
〇(M1)Kazuhito Mitsuhira1, Hitoshi Imamura1, Visikovskiy Anton1, Satoru Tanaka1 (1.Kyushu Univ.)
[21a-A306-3]Periodic ripple graphene on 4H-SiC m-surfaces
〇(D)Hitoshi Imamura1, Visikovskiy Anton1, Tomonori Ikari2, Yuita Fujisawa3, Yukiko Obata3, Yoshinori Okada3, Satoru Tanaka1 (1.Kyushu Univ., 2.NIT-UC, 3.OIST)
[21a-A306-4]Hydrogen intercalation of CVD graphene buffer layer grown on SiC
〇(M1)Kaho Tanaka1, Imamura Hitoshi1, Anton Visikovskiy1, Satoru Tanaka1 (1.KYUSHU Univ.)
[21a-A306-5]Fe intercalation in graphene/SiC (0001) and its interface structure
〇(D)Ryotaro Sakakibara1, Tomo-o Terasawa2,3, Wataru Norimatsu4 (1.Nagoya Univ., 2.JAEA, 3.Univ. of Tokyo, 4.Waseda Univ.)
[21a-A306-6]Controlling the hetero-epitaxial growth of graphene on h-BN
Roki Kohama1, Kazuki Yonekubo1, Hideaki Sugino1, Kento Suwa1, Kenta Sugawara1, Chao Tang1, Takuo Ohkochi2, Issei Watanabe3, Otsuji Taiichi1, 〇Hirokazu Fukidome1 (1.RIEC, Tohoku Univ., 2.JASRI, 3.NICT)
[21a-A306-7]In-plane orientation of graphene CVD on m-plane sapphire substrate
〇Yuta Yanase1, Kohei Osamura1, Takahiro Maruyama1, Shigeya Naritsuka1 (1.Meijo Univ.)
[21a-A306-8]Modification of Graphene by the Photoemission-assisted Plasma (I) - Raman Analysis -
〇Akito Fukuda1, Susumu Takabayashi1, Haruhiro Naito1, Shuto Tanaka1, Hisato Yamaguchi2, Shuichi Ogawa3, Yuij Takakuwa4, Yasutaka Tsuda5, Akitaka Yoshigoe5 (1.National Institute of Technology, Ariake College, 2.Los Alamos National Laboratory, 3.CIT, Nihon Univ., 4.mSIC, Tohoku Univ., 5.Japan Atomic Energy Agency)
[21a-A306-9]Modification of Graphene by the Photoemission-assisted Plasma (II) - Photoelectron Analysis -
〇Susumu Takabayashi1, Akito Fukuda1, Haruhiro Naito1, Shuto Tanaka1, Hisato Yamaguchi2, Shuichi Ogawa3, Yuji Takakuwa4, Yasutaka Tsuda5, Akitaka Yoshigoe5 (1.National Institute of Technology, Ariake College, 2.Los Alamos National Laboratory, 3.CIT, Nihon Univ., 4.mSIC, Tohoku Univ., 5.Japan Atomic Energy Agency)