[21a-A306-1~9] 17.2 Graphene

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[21a-A306-6] Controlling the hetero-epitaxial growth of graphene on h-BN

Roki Kohama¹, Kazuki Yonekubo¹, Hideaki Sugino¹, Kento Suwa¹, Kenta Sugawara¹, Chao Tang¹, Takuo Ohkochi², Issei Watanabe³, Otsuji Taiichi¹, 〇Hirokazu Fukidome¹ (1.RIEC, Tohoku Univ., 2.JASRI, 3.NICT)

Keywords:

h-BN,graphene,hetero-epigrowth

Graphene on hexgonal boron nitride (h-BN) exhibits excellent elecronic propeties, such as the giant carrier mobility, owing to its atomic flatness and a negligible amount of charged impurties. The problem is that graphene/h-BN is formed usually by the so-called transfer method with the mechanical exfoliation. We have succeeded in the heteroepitaxy of graphene on h-BN. This was achieved by using SiC as the substrte. By annealing SiC, Si atoms sublimate. The remaining carbon atoms diffuse to the surface of h-BN, resulting in the formation of graphene on h-BN. Furtheremore, we demonstrates that the thickneess of graphene is controlled by the thickness of h-BN. This heteroepitaxial graphene on h-BN is suitable for THz device applications.