[21a-B101-1~11] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[21a-B101-4] Breakdown characteristics of AlN/Al_0.6Ga_0.4N/AlN HEMTs fabricated by PSD

〇(D)Ryota Maeda¹, Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS, U-Tokyo)

Keywords:

AlGaN,HEMT,Sputtering