The 84th JSAP Autumn Meeting 2023
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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[21a-B101-1~11]15.4 III-V-group nitride crystals

Thu. Sep 21, 2023 9:00 AM - 12:00 PM JST
Thu. Sep 21, 2023 12:00 AM - 3:00 AM UTC
B101 (Civic Auditorium)
Yoshio Honda(Nagoya Univ.), Shugo Nitta(Nagoya Univ.)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-B101-1]Device characteristics of GaInN-besed photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system

〇Takahiro Fujisawa1, Hu Nan1, Tomoki Kojima1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst. Tech.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[21a-B101-2]Investigation of Optical Wireless Power Transmission using InGaN Photonic Power Converter Cell

〇Masahiro Koga1, Shunsuke Shibui1, Ryusei Takahashi1, Junichi Suzuki1, Reo Aoyama1, Takahiro Noguchi1, Shunki Hayashi1, Takahiro Fujisawa2, Shiori Ii4, Ruka Watanabe4, Toshihiko Fukamachi3, Koichi Naniwae3, Makoto Miyoshi2, Tetsuya Takeuchi4, Satoshi Kamiyama4, Shiro Uchida1 (1.Chiba Inst., 2.Nagoya Inst., 3.Ushio Inc., 4.Meijo Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-B101-3]Demonstration of Normally-Off Operation of High Al Composition AlGaN Channel HEMTs with Gate Recess Regions

〇Itsuki Nakaoka1, Makoto Urushiyama1, Etsushi Kubota2, Kenjiro Uesugi2,3, Takao Nakamura1, Hideto Miyake1 (1.Grad. Sch. of Eng. Mie Univ., 2.Grad. Sch. of RIS Mie Univ., 3.ORIP)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[21a-B101-4]Breakdown characteristics of AlN/Al0.6Ga0.4N/AlN HEMTs fabricated by PSD

〇(D)Ryota Maeda1, Takao Kozaka1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS, U-Tokyo)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[21a-B101-5]Multi-channel AlN/AlGaN Schottky barrier diodes

〇Takao Kozaka1, Ryota Maeda1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS, Tokyo Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[21a-B101-6]AlN/n-SiC bulk acoustic resonator operated in the extremely high-frequency regime

〇Megumi Kurosu1, Daiki Hatanaka1, Ryuichi Ohta1, Hiroshi Yamaguchi1, Yoshitaka Taniyasu1, Hajime Okamoto1 (1.NTT BRL)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-B101-7]GaInN-based blue LED with PEDOT:PSS hole transporting layer

〇Yuma Kato1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[21a-B101-8]Influences of facet reflectivity on characteristics of nitride-based green lasers.

〇Kodai Usui1, Rita Higashi1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1 (1.Meijo Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[21a-B101-9]Characterization of InGaN-based MQW laser loaded with air/GaN high-reflectivity DBR

〇Shuya Sato1, Taiki Hayano1, Akihiko Kikuchi1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Inst.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-B101-10]High-Order Guided Mode Excitation Grating Coupler for GaN Transverse Quasi-Phase-Matched Photon Pair Generation Device

〇Yuya Furukawa1, Hiroto Honda1, Kazuhisa Ikeda1, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.Osaka Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[21a-B101-11]Cross-sectional Investigation by Kelvin Probe Force Microscopy around a GaN/GaN Interface Fabricated by Surface-activated Bonding

〇Sihan Wen1, Kazuki Sawai3, Jianbo Liang3, Naoteru Shigekawa3, Takuji Takahashi1,2 (1.IIS, Univ. of Tokyo, 2.IMQUE, Univ. of Tokyo, 3.Osaka Metropolitan Univ.)
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