[21a-P06-1~17] 13.7 Compound and power devices, process technology and characterization

[21a-P06-1] Hybrid-density functional calculation study for orientation dependence of band alignments at 4H-SiC/SiO₂ interface

〇(M2)Shun Matsuda¹, Toru Akiyama¹, Tetsuo Hatakeyama², Kenji Shiraishi³, Takashi Nakayama⁴ (1.Mie Univ., 2.Toyama Pref. Univ., 3.Nagoya Univ., 4.Chiba Univ.)

Keywords:

SiC,First principles calculations