Session Details
[21a-P06-1~17]13.7 Compound and power devices, process technology and characterization
Thu. Sep 21, 2023 9:30 AM - 11:30 AM JST
Thu. Sep 21, 2023 12:30 AM - 2:30 AM UTC
Thu. Sep 21, 2023 12:30 AM - 2:30 AM UTC
P06 (KJ Hall)
[21a-P06-1]Hybrid-density functional calculation study for orientation dependence of band alignments at 4H-SiC/SiO2 interface
〇(M2)Shun Matsuda1, Toru Akiyama1, Tetsuo Hatakeyama2, Kenji Shiraishi3, Takashi Nakayama4 (1.Mie Univ., 2.Toyama Pref. Univ., 3.Nagoya Univ., 4.Chiba Univ.)
[21a-P06-2]Influence of solution pH on Contactless-Photoelectrochemical (CL-PEC) etching of GaN
〇Yoshito Osawa1, Masamichi Akazawa1, Taketomo Sato1 (1.RCIQE, Hokkaido Univ.)
[21a-P06-3]Isolation of AlGaN/GaN HFETs utilizing contactless photo-electrochemical (PEC) etching
〇Yugo Oki1, Takuya Togashi1, Ryota Ochi1, Taketomo Sato1 (1.RCIQE)
[21a-P06-4]Assessment of effects of 850℃ annealing on surface and bulk defects of Mg-ion implanted GaN using MOS structure
〇Genta Shindo1, Yuki Hatakeyama1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ.)
[21a-P06-5]Characterization of Mg-ion-implanted GaN after low-temperature annealing using MOS structure
〇Uryu Ra1, Yuki Hatakeyama1, Masamichi Akazawa1 (1.RCIQE,Hokkaido Univ.)
[21a-P06-6]Insulator-dependence of interface properties of p-GaN MOS structures
〇Yining Jiao1, Takahide Nukariya1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ.)
[21a-P06-7]Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base
〇Masaya Takimoto1, Akira Mase1, Tomoki Kojima1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst. Tech)
[21a-P06-8]Local atomic structure of the Al2O3/GaN interface by X-ray absorption spectroscopy
〇Noritake Isomura1, Daigo Kikuta1, Naoko Takahashi1, Satoru Kosaka1, Keita Kataoka1 (1.Toyota CRDL)
[21a-P06-9]Evaluation of the Al2O3/GaN interface after PMA treatment by photoelectron holography
〇Hazuki Natsui1, Mutsunori Uenuma1,2, Hiroto Tomita1, Yusuke Hashimoto1, Tomohiro Matsushita1, Mami N.Fujii3, Yukiharu Uraoka1 (1.NAIST, 2.AIST, 3.Kindai Univ.)
[21a-P06-10]Dependence of growth temperature on characteristics of MOVPE-grown AlGaN barrier layer using nitrogen carrier gas
〇Atsushi Yamada1, Toshihiro Ohki1, Norikazu Nakamura1 (1.Fujitsu)
[21a-P06-11]Fabrication of high-AlN-mole-fraction AlGaN-channel HFETs on single-crystal AlN substrate (II)
〇Yoshinobu Kometani1, Tomoyuki Kawaide1, Sakura Tanaka1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst. Tech.)
[21a-P06-12]Performance of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped-cap Layer
〇Ryuto Machida1, Naoyuki Kishimoto2, Yuuto Isomae2, Takuya Hayashi2, Munemasa Kunisawa2, Akira Endoh2, Hiroki Fujishiro2, Yoshimi Yamashita1, Shinsuke Hara1, Akifumi Kasamatsu1, Issei Watanabe1,2 (1.NICT, 2.Tokyo Univ. of Science)
[21a-P06-13]1.2kV Class Normally-off Polarization Super Junction (PSJ) GaN Transistors
〇Shuichi Yagi1, Hironori Nakamura1, Yusuke Kamiyama1, Takahiko Kawasaki1, Ryoji Kitahara1, Yuta Isa1, Hironobu Narui1 (1.POWDEC K.K.)
[21a-P06-14]Study of SiO2 Films Formed by Plasma Chemical Vapor Deposition Using Tetraethoxysilane for Nitride Semiconductor Devices
〇Sougo Shikata1 (1.Toyohashi Univ.)
[21a-P06-15]Annealing temperature dependence of In/Au electrode performance on p-GaN
〇MariaEmma Castil Villamin1, Naotaka Iwata1 (1.Toyota Tech Inst)
[21a-P06-16]Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy
〇(M1)Haruto Yoshimura1, Hiroki Imabayashi1, Fumimasa Horikiri2, Yoshinobu Narita2, Hajime Fujikura2, Hiroshi Ohta3, Tomoyoshi Mishima3, Kenji Shiojima1 (1.Univ. of Fukui, 2.Sumitomo Chem., 3.Hosei Univ.)
[21a-P06-17]X-ray Photoelectron Spectroscopy Study of SiO2/GaN Formed by Atomic-Species-Enhanced Chemical Vapor Deposition
〇Sho Yamagata1, Sogo Shikata1, Masakazu Furukawa2, Akihiro Wakahara1, Hiroshi Okada1 (1.Toyohashi Univ. Tech., 2.Aries Research Limited Company)