Presentation Information
[21a-P06-10]Dependence of growth temperature on characteristics of MOVPE-grown AlGaN barrier layer using nitrogen carrier gas
〇Atsushi Yamada1, Toshihiro Ohki1, Norikazu Nakamura1 (1.Fujitsu)
Keywords:
HEMT,Nitride Semiconductors,MOVPE
We investigated the effects of the growth temperature under nitrogen atmosphere on the electrical properties of AlGaN-HEMT structures. The AlGaN barriers were grown at different temperatures from 750°C to 960°C, with N2 as the carrier gas. At growth temperatures below 855°C, threading dislocation density increased with decreasing growth temperature. Moreover, it is found that tensile strain in the AlGaN barriers decreased with decreasing the threading dislocation density.
This strain reduced AlGaN barrier can be expected to improve output power of AlGaN/GaN HEMTs.
This strain reduced AlGaN barrier can be expected to improve output power of AlGaN/GaN HEMTs.