[21a-P06-1~17] 13.7 Compound and power devices, process technology and characterization

[21a-P06-11] Fabrication of high-AlN-mole-fraction AlGaN-channel HFETs on single-crystal AlN substrate (II)

〇Yoshinobu Kometani¹, Tomoyuki Kawaide¹, Sakura Tanaka¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

Keywords:

HFET,AlGaN channel,single crystal AlN substrate