[21a-P06-1~17] 13.7 Compound and power devices, process technology and characterization

[21a-P06-14] Study of SiO2 Films Formed by Plasma Chemical Vapor Deposition Using Tetraethoxysilane for Nitride Semiconductor Devices

〇Sougo Shikata¹ (1.Toyohashi Univ.)

Keywords:

Nitride semiconductors,Tetraethoxysilane

The deposition of silicon-based insulating films by plasma chemical vapor deposition (CVD) using tetraethoxysilane (TEOS), an organic silicon material, is relatively easy to handle equipment and allows for high-speed deposition. It is expected to be applied to passivation films and interlayer insulating films for electronic devices, as well as to power devices including nitride semiconductors. For actual electronic device applications, it is necessary to understand the characteristics of insulating film quality and the insulating film/semiconductor interface. In this study, we evaluated the optical and electrical properties of SiO2 films produced by plasma CVD using TEOS.