[21a-P06-1~17] 13.7 Compound and power devices, process technology and characterization

[21a-P06-16] Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇(M1)Haruto Yoshimura¹, Hiroki Imabayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Hajime Fujikura², Hiroshi Ohta³, Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Sumitomo Chem., 3.Hosei Univ.)

Keywords:

Schottky contacts,scanning internal photoemission microscopy,GaN

Two-dimensional characterization using scanning internal photoemission microscopy was performed for Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts. Without a voltage application, large photocurrent signals were detected at the periphery of the electrode. Upon voltage applications below -1 V, such increase was significantly suppressed. The individual current transport mechanism was visualized.