[21a-P06-1~17] 13.7 Compound and power devices, process technology and characterization

[21a-P06-3] Isolation of AlGaN/GaN HFETs utilizing contactless photo-electrochemical (PEC) etching

〇Yugo Oki¹, Takuya Togashi¹, Ryota Ochi¹, Taketomo Sato¹ (1.RCIQE)

Keywords:

GaN,photo electrochemical etching