[21a-P06-1~17] 13.7 Compound and power devices, process technology and characterization

[21a-P06-4] Assessment of effects of 850℃ annealing on surface and bulk defects of Mg-ion implanted GaN using MOS structure

〇Genta Shindo¹, Yuki Hatakeyama¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

Keywords:

GaN