[21a-P06-1~17] 13.7 Compound and power devices, process technology and characterization

[21a-P06-9] Evaluation of the Al₂O₃/GaN interface after PMA treatment by photoelectron holography

〇Hazuki Natsui¹, Mutsunori Uenuma^1,2, Hiroto Tomita¹, Yusuke Hashimoto¹, Tomohiro Matsushita¹, Mami N.Fujii³, Yukiharu Uraoka¹ (1.NAIST, 2.AIST, 3.Kindai Univ.)

Keywords:

power device,GaN