[21p-A201-1~8] Renewed Challenge of Japan to Cutting-Edge Logic Technology

1:35 PM - 2:05 PM JST(4:35 AM - 5:05 AM UTC)Highlighted Presentation

[21p-A201-2] Advanced Logice Device Technology

〇Tenko Yamashita¹ (1.IBM Research)

Keywords:

Advanced CMOS device technology,FinFET,Nanosheet FET

Since the FinFET volume production was announced in 2012, advanced logic device technology has continued to make amazing progress, and just recently 3nm FinFET technology volume production technology has been announced from major foundries. However, It was predicted that FinFET will reached it's scaling limit sooner or later, Fin Si thickness is a critical parameter to determine the short channel effect and it has already reached theoretical limit to avoid quantum effects. The minimum Fin pitch has also reached to the patterning limitations. Nanosheet device has advantages to overcome those process challenges in FinFET and future improves the drive current per footprint.