[21p-A201-1~8] Renewed Challenge of Japan to Cutting-Edge Logic Technology

3:20 PM - 3:50 PM JST(6:20 AM - 6:50 AM UTC)

[21p-A201-5] Next Interconnect Metals After Copper for Advanced Logic Devices

〇Junichi Koike¹, Toshihiro Kuge¹, Linghan Chen¹ (1.Tohoku University)

Keywords:

Semiconductor,Interconnect,Cu alternative

Advancement of logic devices has been realized by shrinking component size. In order to overcome the scaling limitation of planar transistors, tri-gate FinFET was inplemented at 22 nm node. Simultaneously, Cu interconnect begins to suffer from various problems including resistivity increase and poor reliability in electromigration. To alliviate these problems, new materials have been investigated to replace conventional Cu. In the presentation, we will compare and discuss pros and cons of the proposed materials of pure metals, MAX phases, and intermetallic compounds, and will propose the best possible route to get ready for the beyond-2 nm logic devices.