[21p-A302-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[21p-A302-3] Dependency of PTFE sputtered film properties on deposition conditions

〇Kohshi Taguchi¹, Tomikawa Mina¹, Yamahara Motohiro¹, Noborio Kazuyuki¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

Keywords:

plasma,PTFE,sputter

We investigated the conditions for achieving a contact angle closer to the target in the formation of sputter films targeting PTFE. We also observed the dependence of the contact angle and structure of the sputter films on various deposition parameters. As a result, we found that pressure and processing time have a significant influence.By analyzing the results of FT-IR and DSC measurements, we discussed the relationship between the changes in molecular structure, physical properties, and the pressure and processing time.