Session Details

[21p-A302-1~9]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 21, 2023 1:00 PM - 3:15 PM JST
Thu. Sep 21, 2023 4:00 AM - 6:15 AM UTC
A302 (KJ Hall)
Makoto Sekine(Nagoya Univ.)

[21p-A302-1]Preparation of AlCrN Films by DC Vacuum Arc Deposition System with a Coiled Anode

〇jumpei kito1, Takahiro Bando1, Toru Harigai1, Hirofumi Takikawa1, Hiroaki Sugita2, Takahiro Hattori2, Hiroki Gima2 (1.Toyohashi Univ. Technol, 2.OSG Co., Ltd)

[21p-A302-2]Synthesis of CNT-supported gold nanoparticles by RF liquid plasma and their utilization

〇Ryo Fujimaki1 (1.SIT)

[21p-A302-3]Dependency of PTFE sputtered film properties on deposition conditions

〇Kohshi Taguchi1, Tomikawa Mina1, Yamahara Motohiro1, Noborio Kazuyuki1 (1.SAKIGAKE-Semiconductor Co., Ltd.)

[21p-A302-4]The method of vacuum plasma treatment by solid reductant.

〇Kohshi Taguchi1, Akihiro Yamamura1, Shinya Ueno1, Takayuki Kitagawa1, Motohiro Yamahara1, Kazuyuki Noborio1 (1.Sakigake Semiconductor Co.,Ltd.)

[21p-A302-5]Effect of Atmospheric Pressure Non-equilibrium RF Plasma Jet Irradiation on Direct Bonding of Metal-Organic Dissimilar Materials

〇Kosuke Takenaka1, Soutaro Nakamoto1, Ryosuke Koyari1, Susumu Toko1, Giichiro Uchida2, Yuichi Setsuhara1 (1.Osaka Univ., 2.Meijo Univ.)

[21p-A302-6]Behavior of Radical Adsorption on Plasma Induced Defect for Atomic Layer Etching

Airah Peraro Osonio1, 〇Takayoshi Tsutsumi1, Kenji Ishikawa1, Masaru Hori1 (1.Nagoya Univ.)

[21p-A302-7]A Simulated Research for Dry Atomic Layer Processing by Irradiating Plasma Ion beams

〇Kazuhiro Miwa2, Noriharu Takada2, Masaru Hori1,2, Kenji Ishikawa1,2 (1.Nagoya Univ., 2.cLPS)

[21p-A302-8]Plasma-induced defects ~ impact of O2 plasma irradiation on SiO2/Si interface~

〇Shota Nunomura1, Takayoshi Tsutsumi2, Masaru Hori2 (1.AIST, 2.Naogya Univ.)

[21p-A302-9]Effects of Microwave Irradiation on Mechanical Property of Plasma-damaged Silicon Nitride Films

〇Takahiro Goya1, Keiichiro Urabe1, Koji Eriguchi1 (1.Kyoto Univ.)