[21p-A302-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[21p-A302-6] Behavior of Radical Adsorption on Plasma Induced Defect for Atomic Layer Etching

Airah Peraro Osonio¹, 〇Takayoshi Tsutsumi¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:

Etching,Radical,Defect