[21p-A302-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[21p-A302-7] A Simulated Research for Dry Atomic Layer Processing by Irradiating Plasma Ion beams

〇Kazuhiro Miwa², Noriharu Takada², Masaru Hori^1,2, Kenji Ishikawa^1,2 (1.Nagoya Univ., 2.cLPS)

Keywords:

Dry Atomic Layer Processing,plasma ion beam,XPS surface analysis

Dry Atomic Layer Processing (ALP) will be essential not only for manufacturing of innovative semiconductor devices but also for future superconducting quantum devices. We experimentally simulated ALP of aluminum oxide formation for tunnel barrier layers in Josephson-Junctions by Irradiating plasma ion beams on sample Al surfaces, then analyzed the surface with XPS without breaking of vacuum. As the result, we have concluded that the surface amorphous alumina or Al-OH can be converted to Al-O by the irradiation.