[21p-B101-1~16] 15.4 III-V-group nitride crystals

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[21p-B101-1] Optical characteristics of heavily Ge-doped n-GaN grown via sputtering

〇Aiko Naito¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

Keywords:

doping,gallium nitride,sputtering