[21p-B101-1~16] 15.4 III-V-group nitride crystals

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[21p-B101-10] RF-MBE growth of GaInN with insertion of GaInN buffer layer on GaN using in-situ XRD-RSM
- Growth temperature dependence of GaInN-

〇(M2)Jo Takeuchi¹, Takuo Sasaki², Go Okuma¹, Haruka Yokoyama¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹, Yasushi Nanishi³ (1.Kogakuin Univ., 2.QST, 3.Ritsumeikan Univ.)

Keywords:

RF-MBE,GaInN,XRD-RSM