Presentation Information

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[21p-B101-11]Epitaxial growth and evaluation of properties of InGaN thermoelectric thin film

〇Momoko Deura¹, Shota Hattori², Tsutomu Araki² (1.R-GIRO, 2.Ritsumeikan Univ.)

Keywords:

InGaN,thermoelectric properties,RF-MBE

We aim to elucidate thermoelectric properties and improve thermoelectric performance of nitride semiconductors. To elucidate detailed and accurate thermoelectric properties, it is necessary to obtain high-quality crystals with various contents and structures. In contrast, thicker film is preferable to obtain better thermoelectric performance. In this study, we performed control of In content and evaluation of properties of InGaN thermoelectric thin films.

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