Presentation Information

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[21p-B101-15]Al/N Ratio Dependence of Low Temperature AlN Growth by RF-MBE

〇Yuma Kawakami¹, Tsutomu Araki¹, Momoko Deura² (1.Ritsumeikan Univ., 2.R-GIRO)

Keywords:

Molecular Beam Epitaxy,Aluminum nitride

AlN is expected to be a passivation material for AlGaN/GaN high electron mobility transistors (HEMT). However, passivation must be performed at low temperatures because of the low melting point of Al used for electrodes, but it is difficult to obtain single crystals by conventional methods such as CVD and ALD. Therefore, we have investigated the Al/N ratio dependence of crystallinity and surface morphology of AlN crystals grown at low temperatures by RF-MBE.

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