[21p-B101-1~16] 15.4 III-V-group nitride crystals

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[21p-B101-3] Low forward voltage operation of degenerate n-type GaN-based tunnel junction contact LED prepared by sputtering

〇Jeongeui Hwang¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

Keywords:

GaN,sputtering,LED

In this presentation, we report experimental results of d-GaN stacked on commercial LED wafers using a sputtering method to realize TJ-LEDs with low-voltage operation.