[21p-B101-1~16] 15.4 III-V-group nitride crystals

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[21p-B101-4] Comparison of Ohmic Contacts of N-polar GaN HEMT using n⁺-GaN Regrown by MOCVD and Sputtering

〇Takahide Hirasaki¹, Akihiro Hayasaka¹, Masaya Okada¹, Isao Makabe¹, Yukihiro Tsuji¹, Kozo Makiyama¹, Ken Nakata¹ (1.Sumitomo Electric)

Keywords:

Nitride semiconductors,High Electron Mobility Transistors,N-polar