[21p-B101-1~16] 15.4 III-V-group nitride crystals

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[21p-B101-5] Study of GaN thin film deposition using ECR plasma sputtering method

〇HIRONORI TORII^1,2, Kozue Tanaka¹, Shinsuke Matsui² (1.JSW AFTY Co., 2.Chiba Institute of Technology)

Keywords:

GaN,Sputtering,ECR