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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[21p-B101-6]Control of In content in InGaN on ScAlMgO₄ substrates grown using RF-MBE

〇Momoko Deura¹, Yuta Kubo², Yasuhiro Yamada², Takashi Fujii², Tsutomu Araki² (1.R-GIRO, 2.Ritsumeikan Univ.)

Keywords:

InGaN,SAM substrates,RF-MBE

SAM substrates have attracted attention as a substrate for InGaN growth in recent years, and we have succeeded the direct InGaN growth on SAM substrates using RF-MBE. In this study, we investigated the control of In content to growhigh-quality InGaN layer lattice-matched with SAM substrates.

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[21p-B101-6]Control of In content in InGaN on ScAlMgO4 substrates grown using RF-MBE

Keywords:

[21p-B101-6]Control of In content in InGaN on ScAlMgO₄ substrates grown using RF-MBE