[21p-B101-1~16] 15.4 III-V-group nitride crystals

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[21p-B101-7] Microstructural characterization of InGaN grown by RF-MBE on ScAlMgO₄

〇Yasuhiro Yamada¹, Yuta Kubo¹, Yuichi Wada¹, Momoko Deura², Takashi Fujii¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO)

Keywords:

TEM,ScAlMgO4,RF-MBE