Presentation Information
[21p-B201-10]The Numerical Simulation of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process
〇Jiuyang Yuan1, Yoshiji Miyamura2, Satoshi Nakano2, Wataru Saito2, Shin-ichi Nishizawa2 (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)
Keywords:
Si wafer,IGBT fabrication,dislocation density
In high thermal budget process of Si-IGBT, such as oxidation, diffusion process, the stress is generated by the temperature distribution inside the wafer, and causes dislocation propagation, which may degrade the performance of power device. The degradation is more pronounced in large diameter Si wafers processes which for high productivity and low-cost power device. Therefore, it becomes important to suppress the dislocation propagation in Si wafer during high thermal budget process.
In this study, we first discuss the dislocation density in the Si wafer during the full Si-IGBT fabrication process. Then we discuss the diffusion process, set the different diffusion temperature and diffusion time, which can get the same diffusion length. Finally, we quantitatively evaluate how the wafer will be affected at low temperature process.
In this study, we first discuss the dislocation density in the Si wafer during the full Si-IGBT fabrication process. Then we discuss the diffusion process, set the different diffusion temperature and diffusion time, which can get the same diffusion length. Finally, we quantitatively evaluate how the wafer will be affected at low temperature process.