Session Details
[21p-B201-1~16]13.7 Compound and power devices, process technology and characterization
Thu. Sep 21, 2023 1:30 PM - 5:45 PM JST
Thu. Sep 21, 2023 4:30 AM - 8:45 AM UTC
Thu. Sep 21, 2023 4:30 AM - 8:45 AM UTC
B201 (Civic Auditorium)
Taketomo Sato(Hokkaido Univ.)
[21p-B201-1][Young Scientist Presentation Award Speech] Improved channel mobility in SiC p-channel MOSFETs utilizing nonpolar faces
〇Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
[21p-B201-2]Theoretical Analysis of Impact Ionization Coefficients in 4H-SiC
〇Hajime Tanaka1, Tsunenobu Kimoto2, Nobuya Mori1 (1.Osaka Univ., 2.Kyoto Univ.)
[21p-B201-3]Formation of low contact layer to n-type 4H-SiC by laser doping
〇Yasutsugu Usami1, Kaname Imokawa1, Ryoichi Nohdomi1, Kouji Kakizaki1, Rei Hobara2, Shuji Hasegawa2 (1.Gigaphoton Inc., 2.Phys. Tokyo Univ.)
[21p-B201-4]A study of thermal stress between SiC/SiO2 interface in SiC-SBD by micro-Raman
〇Tatsuya Kiyozumi1, Jun Suda1 (1.Chukyo Univ.)
[21p-B201-5]Development of Interfacial Thermal Resistance Measurement Technique for SU-8/SiC based on Optical-Interference Contactless Thermometry (OICT)
〇Jiawen Yu1, Ryunosuke Goto1, Hiroaki Hanafusa1, Seiichirou Higashi1 (1.Hiroshima Univ.)
[21p-B201-6]SNDM Evaluation of Cubic and Hexagonal Epitaxially Stacked SiC MOS Interfaces
〇Yasuo Cho1, Hiroyuki Nagasawa2, Masao Sakuraba3, Shigeo Sato3 (1.Tohoku Univ. NICHe, 2.CUSIC Inc., 3.Tohoku Univ. RIEC)
[21p-B201-7]Nitridation and interface properties of NO-annealed SiO2/SiC(0-33-8) structures
〇Hayato Iwamoto1, Takato Nakanuma1, Hirohisa Hirai2, Mitsuru Sometani1,2, Mitsuo Okamoto2, Takuma Kobayashi1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ., 2.AIST)
[21p-B201-8]Relationship between Hysteresis and Holes Passing through the Gate Oxide for SiC MOSFETs
〇Munetaka Noguchi1, Akihiro Koyama1, Toshiaki Iwamatsu1, Hiroshi Watanabe1, Kazuyasu Nishikawa1 (1.Mitsubishi Electric Corp.)
[21p-B201-9]Measurement time reduction by time division method for simultaneous measurement of magnetic field and temperature by simultaneously-resonated optically detected magnetic resonance using silicon vacancy based quantum sensor
〇Tomoaki Tanaka1, Yuichi Yamazaki1, Digh Hisamoto2, Takeshi Ohshima1 (1.QST, 2.R&D Group, Hitachi Ltd.)
[21p-B201-10]The Numerical Simulation of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process
〇Jiuyang Yuan1, Yoshiji Miyamura2, Satoshi Nakano2, Wataru Saito2, Shin-ichi Nishizawa2 (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)
[21p-B201-11]Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation
〇Bozhou Cai1, Jiuyang Yuan1, Yoshiji Miyamura2, Wataru Saito2, Shin-ichi Nishizawa2 (1.Kyushu Univ., 2.RIAM Kyushu Univ.)
[21p-B201-12]Current-voltage characteristics of Schottky barrier diodes fabricated on ultra-low concentration Si-ion implanted n-type GaN epitaxial layer
〇Hiroko Iguchi1, Masahiro Horita1,2, Jun Suda1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
[21p-B201-13]Improved breakdown voltage of HVPE/MOVPE hybrid grown GaN p-n diode by interface treatment.
〇Hiroshi Ohta1, Hajime Fujikura2, Yoshinobu Narita2, Tomoyoshi Mishima1 (1.Hosei univ., 2.Sumitomo chem.)
[21p-B201-14]Characterization of GaN p-n junction diodes fabricated by Mg/N co-implantation and ultra-high-pressure annealing
〇Kazuki Kitagawa1, Testu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
[21p-B201-15]Analysis of conductivity modulation using GaN pn junction diodes with different drift layer widths
〇Shigeyoshi Usami1, Hiroshi Ohta2, Hirotaka Watanabe3, Masayuki Imanishi1, Shugo Nitta3, Yoshio Honda3, Tomoyoshi Mishima2, Hiroshi Amano3, Yusuke Mori1 (1.Osaka Univ., 2.Hosei Univ., 3.IMaSS Nagoya Univ.)
[21p-B201-16]The effect of Lo-layer donor concentration for input-output characteristics on
microwave band GaN Hi-Lo type IMPATT diode
〇Seiya Kawasaki1, Takeru Kumabe1, Manato Deki2,1, Hirotaka Watanabe3, Atsushi Tanaka3, Yoshio Honda3, Manabu Arai3, Hiroshi Amano3 (1.Nagoya Univ., 2.D Tech. Center, Nagoya Univ., 3.IMaSS, Nagoya Univ.)