[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B201-11] Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation

〇Bozhou Cai¹, Jiuyang Yuan¹, Yoshiji Miyamura², Wataru Saito², Shin-ichi Nishizawa² (1.Kyushu Univ., 2.RIAM Kyushu Univ.)

Keywords:

Silicon IGBT oxidation process,Silicon wafer trench structure,scaling

In this study, a three-dimensional model of a silicon chip with trench structures was developed to analyze the stress distribution induced by thermal process at the top of the trench, the scribe line, and the bottom surface of the wafer. The calculated stress is in good agreement with measurement by Raman spectroscopy. The trench top has much higher stress than the scribe line and the bottom surface. The stress depends on oxide thickness and the size scaling may reduce the stress.