[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[21p-B201-12] Current-voltage characteristics of Schottky barrier diodes fabricated on ultra-low concentration Si-ion implanted n-type GaN epitaxial layer

〇Hiroko Iguchi¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

galium nitride,point defect,ion implantation

We have investigated annealed n-type GaN samples with implantation of Si-ions at an ultra-low concentration, less than 1/10 of the effective donor density in the n-type GaN layer. In this time, the hysteresis loops of current-voltage curves in Schottky barrier diodes fabricated on ultra-low concentration Si-ion implanted n-type GaN epitaxial layer were examined in detail.