[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[21p-B201-13] Improved breakdown voltage of HVPE/MOVPE hybrid grown GaN p-n diode by interface treatment.

〇Hiroshi Ohta¹, Hajime Fujikura², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei univ., 2.Sumitomo chem.)

Keywords:

GaN p-n junction diode,Hybrid growth method,CF4 ICP etching

In a hybrid growth method in which an n-GaN layer was grown on a GaN substrate by the hydride vapor phase epitaxy (HVPE) method and then a p-GaN layer was grown by the metalorganic chemical vapor epitaxy (MOVPE) method, ICP etching process using CF₄ was performed before growing the p-GaN layer. We have achieved a high breakdown voltage of over 6 kV in GaN p-n diodes (PNDs). At the same time, forward characteristics were also improved compared to PNDs without ICP etching.