[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[21p-B201-14] Characterization of GaN p-n junction diodes fabricated by Mg/N co-implantation and ultra-high-pressure annealing

〇Kazuki Kitagawa¹, Testu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:

GaN,p-n junction diodes,ultra-high-pressure annealing