[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B201-2] Theoretical Analysis of Impact Ionization Coefficients in 4H-SiC

〇Hajime Tanaka¹, Tsunenobu Kimoto², Nobuya Mori¹ (1.Osaka Univ., 2.Kyoto Univ.)

Keywords:

SiC,impact ionization,high-field transport