[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[21p-B201-3] Formation of low contact layer to n-type 4H-SiC by laser doping

〇Yasutsugu Usami¹, Kaname Imokawa¹, Ryoichi Nohdomi¹, Kouji Kakizaki¹, Rei Hobara², Shuji Hasegawa² (1.Gigaphoton Inc., 2.Phys. Tokyo Univ.)

Keywords:

SiC,Laser doping,Low contact resistance

A high-concentration nitrogen layer of 2×10²¹ atoms/cm³ exceeding the solid solubility limit was formed by laser doping. Sheet resistance of the formed layer was measured by a micro 4-point probe, and sheet resistance and contact resistance were measured by CTLM (Circular Transmission Line Measurement). As a result, we were able to form an extremely low contact surface of about 3.2×10^-8 Ωcm².