[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B201-5] Development of Interfacial Thermal Resistance Measurement Technique for SU-8/SiC based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Ryunosuke Goto¹, Hiroaki Hanafusa¹, Seiichirou Higashi¹ (1.Hiroshima Univ.)

Keywords:

semiconductor,SiC power device,interfacial thermal resistance

Interfacial thermal resistance (ITR) plays a great important role in the thermal design of SiC power device modules. However, experimentally measuring the ITR between thermal interface material (TIM) and SiC is still challenging as a result of a lack of efficient measurement methods. Optical-Interference Contactless Thermometry (OICT) can measure the transient internal wafer temperature with high spatial and temporal resolutions. Based on this method, ITR at the SU-8 /SiC interface has been measured.