[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[21p-B201-6] SNDM Evaluation of Cubic and Hexagonal Epitaxially Stacked SiC MOS Interfaces

〇Yasuo Cho¹, Hiroyuki Nagasawa², Masao Sakuraba³, Shigeo Sato³ (1.Tohoku Univ. NICHe, 2.CUSIC Inc., 3.Tohoku Univ. RIEC)

Keywords:

3C-SiC(111)/4H-SiC(0001) stacked MOSFET,scanning nonliear dielectric micrsoscopy,interface density of state

A 3C-SiC(111)/4H-SiC(0001) stacked MOSFET (CHESS-MOS®) has been reported, which can reduce on-resistance during high-voltage operation by effectively utilizing the characteristics of 3C-SiC, which has a small MOS interface density of state but a narrow band gap, and 4H-SiC, which has the opposite. In this study, we report on the characterization of the interface state of SiO₂ on 3C-SiC(111)/4H-SiC(0001) MOS structure using scanning nonlinear dielectric constant microscopy (SNDM).